BSM75GB170DN2HOSA1

BSM75GB170DN2HOSA1

Image is for reference, please contact us to get the real picture

Manufacturer Part BSM75GB170DN2HOSA1
Manufacturer Rochester Electronics
Description IGBT, 110A I(C), 1700V V(BR)CES,
Category Discrete Semiconductor Products
Family Transistors - IGBTs - Modules
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet BSM75GB170DN2HOSA1 PDF

Availability

InStock 1,015
UnitPrice $ 93.33000

BSM75GB170DN2HOSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSM75GB170DN2HOSA1 Specifications

Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1.7 V
Current - Collector (Ic) (Max):110 A
Power - Max:625 W
Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 75A
Current - Collector Cutoff (Max):-
Input Capacitance (Cies) @ Vce:11 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.


Payment
Payment

TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.

Featured Products

Copyright © 2024 ZHONG HAI SHENG TECHNOLOGY LIMITED All Rights Reserved.

Privacy Statement | Terms Of Use | Quality Warranty

Top