SI3900DV-T1-GE3

SI3900DV-T1-GE3

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Manufacturer Part SI3900DV-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET 2N-CH 20V 2A 6-TSOP
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SI3900DV-T1-GE3 PDF

Availability

InStock 4,769
UnitPrice $ 1.02000

SI3900DV-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI3900DV-T1-GE3 Specifications

Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2A
Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:830mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP

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